H5TC4G63AFR-PBI vs MT41K256M16RE-125:D Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63AFR-PBI disebabkan oleh SK hynix dan MT41K256M16RE-125:D disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPengandingan Spesifikasi
| Parametr | H5TC4G63AFR-PBI | MT41K256M16RE-125:D |
|---|---|---|
| Merek | SK hynix | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Obsolete | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Organisasi | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Kadar Data | DDR3-1600 (PC3L-12800) | 1600 MT/s |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Number of Banks | 8 | — |
| Burst Length | 8 (BL8) | 8, 4 |
| Latensi CAS | Programmable | 11 |
| On-Die Termination (ODT) | Yes | — |
| Refresh Period | 7.8 us at 85°C | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) | FBGA-96 (9x14 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Number of Terminals | 96 | — |
| Status RoHS | Compliant | — |
| Density | — | 4 Gb |
| Suhu Operasi | — | 0C to +95C (TC) |
| RoHS | — | Compliant |
| Lead-Free | — | Yes |
| On-Die Termination | — | Yes |
| Auto-Refresh | — | Yes |
| Self-Refresh | — | Yes |
| Ball Pitch | — | 0.8 mm |