H5TC4G63MFR-PBA vs H5TC4G63CFR-H9J Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5TC4G63MFR-PBA disebabkan oleh SK hynix dan H5TC4G63CFR-H9J disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5TC4G63MFR-PBA | H5TC4G63CFR-H9J |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | 1.35V +0.100/-0.067V |
| Kadar Data | 1866 Mbps (PC3L-14900) | — |
| Kemasan | 96-ball FBGA | 96-ball TFBGA |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | Yes |
| Speed Grade | — | -H9 (1866 Mbps / PC3-14900) |
| Number of Terminals | — | 96 |
| Temperature Grade | — | Industrial |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Clock Input | — | Fully differential (CK, CK) |
| Data Strobe | — | Differential (DQS, DQS) |
| On-Chip DLL | — | Yes |
| Data Mask (DM) | — | Yes |