H5TC4G63MFR-PBA vs H5TC4G63CFR-H9J 比較

詳細並排比較 H5TC4G63MFR-PBA 由 SK hynix 與 H5TC4G63CFR-H9J 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

SK hynix
H5TC4G63MFR-PBA H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63MFR-PBA ✓ 啟用中
SK hynix
H5TC4G63CFR-H9J H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J - 4Gb DDR3L SDRAM 96-Ball TFBGA | SK Hynix

H5TC4G63CFR-H9J ✓ 啟用中

規格比較

參數 H5TC4G63MFR-PBA H5TC4G63CFR-H9J
品牌 SK hynix SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4Gb
組織 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V (+0.100V/-0.067V) 1.35V +0.100/-0.067V
資料速率 1866 Mbps (PC3L-14900) —
封裝 96-ball FBGA 96-ball TFBGA
Number of Banks 8 —
Burst Length BL8, BL4 (with burst chop) —
CAS Latency (CL) Programmable —
CAS Write Latency (CWL) Programmable —
Additive Latency Programmable —
On-Die Termination (ODT) Yes —
ZQ Calibration Yes —
Write Leveling Yes —
Auto Self-Refresh Yes —
Temperature-Compensated Self-Refresh Yes —
Process Technology 30nm-class —
RoHS Compliant Yes (Lead-Free & Halogen-Free) Yes
Speed Grade — -H9 (1866 Mbps / PC3-14900)
Number of Terminals — 96
Temperature Grade — Industrial
Lead-Free — Yes
無鹵素 — Yes
Clock Input — Fully differential (CK, CK)
Data Strobe — Differential (DQS, DQS)
On-Chip DLL — Yes
Data Mask (DM) — Yes

資料表與資源

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