IAUC100N04S6L020ATMA1 vs BSC100N10NSFGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L020ATMA1 disebabkan oleh Infineon dan BSC100N10NSFGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N04S6L020ATMA1 - 40V 100A 2mΩ OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L020ATMA1 ✓ AktifInfineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N04S6L020ATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Breakdown Voltage V(BR)DSS | 40 V | — |
| Continuous Drain Current (Tc) | 100 A | — |
| Power Dissipation (Tc) | 75 W | — |
| RDS(on) Maximum @ VGS=10V, ID=50A | 2.04 mΩ | — |
| RDS(on) Typical | 2.0 mΩ | — |
| Gate-Source Voltage VGS (max) | ±20 V | — |
| Gate Threshold Voltage VGS(th) Typical | 2.0 V | — |
| Technology | OptiMOS 6 | MOSFET (Metal Oxide) |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ) | -55C to +150C (junction) |
| Kemasan | PG-TDSON-8 (SS08, 5x6 mm leadless) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | Automotive grade | — |
| Packaging | Tape & Reel (TMA1) | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |