IAUC100N04S6L020ATMA1 vs IAUC100N04S6L014ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L020ATMA1 disebabkan oleh Infineon dan IAUC100N04S6L014ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6L014ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L020ATMA1 IAUC100N04S6L014ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS 6
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55C to +175C
Kemasan PG-TDSON-8 (SS08, 5x6 mm leadless) PG-TDSON-8 (SuperSO8, 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) Tape & Reel (ATMA1 suffix)
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — IAUC / OptiMOS 6 40V
Jenis Transistor — N-Channel MOSFET
Mode — Enhancement
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
R_DS(on) max (V_GS=10V) — 1.4 mOhm
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G typical]
Power Dissipation (P_D, Tc) — 100 W
AEC-Q101 Qualification — Yes
Aras MSL — 1

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