IAUC100N10S5N040ATMA1 vs IAUC100N10S5L040ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5N040ATMA1 disebabkan oleh Infineon dan IAUC100N10S5L040ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ AktifInfineon
IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
IAUC100N10S5L040ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N10S5N040ATMA1 | IAUC100N10S5L040ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 400 A |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55 C to +175 C (junction) |
| Kemasan | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (up to 260C peak reflow) | — |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | Feasible for automatic optical inspection |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOST 5 Power-Transistor (IAUC) |
| Jenis Transistor | — | N-Channel Enhancement Mode MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-State Resistance RDS(on) max | — | 4 mOhm |
| Gate Threshold Voltage VGS(th) | — | Logic Level |
| Continuous Power Dissipation (Tc) | — | 167 W |
| MSL Moisture Sensitivity | — | MSL1 (up to 260 C peak reflow) |
| Avalanche Tested | — | 100% production avalanche tested |