IAUC120N04S6N009ATMA1 vs IAUC100N10S5L040ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N04S6N009ATMA1 disebabkan oleh Infineon dan IAUC100N10S5L040ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC120N04S6N009ATMA1 IAUC100N10S5L040ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 40V OptiMOST 5 Power-Transistor (IAUC)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 120 A —
Arus Alir Gesa [DATA_NEEDED: pulsed I_D value] —
R_DS(on) max @ V_GS=10V 0.9 mΩ —
Gate Threshold Voltage V_GS(th) typ [DATA_NEEDED: V_GS(th) typical value] —
Total Gate Charge Q_g typ [DATA_NEEDED: Q_g typical] —
Power Dissipation (Tc) 150 W —
Thermal Resistance R_thJC max 1.0 K/W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Aras MSL 1 —
RoHS Compliant —
Lead-Free / Halogen-Free Yes (per Infineon product page) —
Jenis Transistor — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — 400 A
On-State Resistance RDS(on) max — 4 mOhm
Gate Threshold Voltage VGS(th) — Logic Level
Continuous Power Dissipation (Tc) — 167 W
Gambaran Suhu Operasi — -55 C to +175 C (junction)
MSL Moisture Sensitivity — MSL1 (up to 260 C peak reflow)
Avalanche Tested — 100% production avalanche tested
AOI Compatibility — Feasible for automatic optical inspection

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