IAUC120N06S5L032ATMA1 vs IPD031N06L3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N06S5L032ATMA1 disebabkan oleh Infineon dan IPD031N06L3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC120N06S5L032ATMA1 IPD031N06L3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 (60 V) —
Jenis Transistor N-Channel, Enhancement Mode —
Drain-to-Source Voltage (V_DS) 60 V —
Continuous Drain Current (I_D, T_j) 120 A —
R_DS(on) Max (V_GS = 10 V) 3.2 mOhm —
Power Dissipation (P_D, T_C = 25 C) 94 W —
Kemasan PG-TDSON-8-34 (5x6 mm) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (T_j) -55°C to +175°C
Technology OptiMOS 5 Trench MOSFET (Metal Oxide)
AEC-Q101 Qualified Yes —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (Unlimited)
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge Q_G [DATA_NEEDED: Q_G total at V_GS=10V] —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.2 V
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Series — OptiMOS 3

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