IAUC41N06S5N102ATMA1 vs ISC015N06NM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5N102ATMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IAUC41N06S5N102ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | — |
| Power Dissipation (PD, Tc=25C) | 42 W | — |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A | — |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | — |
| Total Gate Charge (QG) | 12.5 nC | — |
| Kemasan | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55 C to +175 C |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | — |
| Status RoHS | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |