IAUC41N06S5N102ATMA1 vs ISC015N06NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC41N06S5N102ATMA1 sa pamamagitan ng Infineon at ISC015N06NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ NakahandaInfineon
ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N06NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC41N06S5N102ATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | — |
| Power Dissipation (PD, Tc=25C) | 42 W | — |
| On-Resistance (RDS(on)) | 10.2 mΩ at VGS=10 V, ID=20 A | — |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | — |
| Total Gate Charge (QG) | 12.5 nC | — |
| Packhaging | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55 C to +175 C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | — | 1 |