IAUC60N04S6L030HATMA1 vs IAUC120N06S5N017ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6L030HATMA1 disebabkan oleh Infineon dan IAUC120N06S5N017ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC60N04S6L030HATMA1 IAUC120N06S5N017ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 —
Configuration Half-Bridge (2 N-Channel) —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID) at TJ 60 A —
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) —
Total Gate Charge (Qg) at VGS=10V 35 nC 95.9 nC
Output Capacitance (Coss) 2.128 nF 1.507 nF
Reverse Transfer Capacitance (Crss) 596 pF 84 pF
Gate Threshold Voltage (VGS(th)) 2 V —
Maximum Power Dissipation (PD) at TC 75 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-43 (TDSON-8 EP)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) —
Status RoHS Compliant —
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Continuous Drain Current (ID, Tc=25°C) — 120 A
Pulsed Drain Current (IDM) — 757 A
RDS(on) at VGS=10V — 1.7 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 3.4 V (typ)
Input Capacitance (Ciss) — 6.952 nF
Power Dissipation (PD, Tc=25°C) — 167 W
Gambaran Suhu Operasi — -55°C to +175°C
AEC-Q101 Qualification — Yes (Automotive Grade)
RoHS Compliance — Green Product (RoHS compliant)

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