IAUC60N04S6L039ATMA1 vs IPG20N10S436AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC60N04S6L039ATMA1 disebabkan oleh Infineon dan IPG20N10S436AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC60N04S6L039ATMA1 IPG20N10S436AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 6 (trench) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25C) 60 A —
Pulsed Drain Current (I_DM) 240 A —
R_DS(on) max @ V_GS=10V 3.9 milliohm —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Power Dissipation (P_D) 42 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TDSON-8 (SSO8) 5x6 mm PG-TDSON-8-10 (Wettable Flank)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (per JEDEC J-STD-020) MSL1 (260 C peak reflow)
Automotive Qualification AEC-Q101 qualified AEC-Q101
Status RoHS Compliant Compliant (Green Product)
Avalanche Rated Yes (100% avalanche tested) —
Configuration — Dual N-Channel (2 Elements with Built-in Diode)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) — 20 A (per channel)
Total Power Dissipation (PD) — 43 W
Operating Mode — Enhancement Mode
Operating Temperature (TJ max) — +175 C
JESD-609 Code — e3
Avalanche Tested — 100%
AOI Compatible — Yes (Wettable Flank)
Channel Type — N-Channel Normal Level

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