IAUC90N10S5N062ATMA1 vs IAUC50N08S5L096ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC90N10S5N062ATMA1 disebabkan oleh Infineon dan IAUC50N08S5L096ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC90N10S5N062ATMA1 IAUC50N08S5L096ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) —
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes Yes
Product Series — OptiMOS 5
FET Type — N-Channel
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Gambaran Suhu Operasi — -55°C to +175°C
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL level]

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