IAUCN04S7L005ATMA1 vs IAUCN04S7L042GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L005ATMA1 disebabkan oleh Infineon dan IAUCN04S7L042GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L005ATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 7 (trench N-channel MOSFET) Trench N-Channel MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, T_C=25°C) 430 A (Tj) —
Continuous Drain Current (I_D, T_C=100°C) [DATA_NEEDED: I_D at T_C=100°C] —
On-Resistance R_DS(on) max 0.52 mΩ —
Power Dissipation (P_D) 179 W (T_C) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical and min/max] —
Total Gate Charge (Q_g) [DATA_NEEDED: total Q_g in nC] —
Gambaran Suhu Operasi -55°C to +175°C (Tj) -55C to +175C (Tj)
Kemasan PG-TDSON-8-43 (TDSON-8) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Kiraan Pin 8 —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

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