IAUCN04S7L028ATMA1 vs IAUCN04S7L042GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L028ATMA1 disebabkan oleh Infineon dan IAUCN04S7L042GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN04S7L028ATMA1 IAUCN04S7L042GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) 100 A —
On-State Resistance (RDS(on)) max 2.80 mOhm at VGS=10 V —
On-State Resistance (RDS(on)) 2.82 mOhm at VGS=10 V (JLCPCB reported) —
Gate-Source Threshold (VGS(th)) 1.8 V (typ) —
Gate Charge (Qg) 24 nC at VGS=10 V —
Input Capacitance (Ciss) 1.578 nF —
Output Capacitance (Coss) 788 pF —
Reverse Transfer Capacitance (Crss) 36 pF —
Pembuangan Kuasa (Ptot) 58 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8-33 (TDSON-8 EP) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Jenis Pemasangan Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Product Family — OptiMOS 7 40V
Technology — Trench N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 77 A
Maximum Power Dissipation (PD, Tc) — 50 W
Gambaran Suhu Operasi — -55C to +175C (Tj)
Polarity / Channel Type — N-Channel enhancement mode
Automotive Qualified — Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Aras MSL — 1
Packing — Tape & Reel (per -ATMA1 suffix)
Target Substrate — IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg @ VGS=10V]

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