IAUCN04S7L028ATMA1 vs IAUCN04S7L042GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L028ATMA1 sa pamamagitan ng Infineon at IAUCN04S7L042GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7L028ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 100 A | — |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | — |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | — |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | — |
| Gate Charge (Qg) | 24 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 1.578 nF | — |
| Output Capacitance (Coss) | 788 pF | — |
| Reverse Transfer Capacitance (Crss) | 36 pF | — |
| Pwersang Pinahihigpit (Ptot) | 58 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TDSON-8-33 (TDSON-8 EP) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 7 40V |
| Technology | — | Trench N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (Tj) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Level ng MSL | — | 1 |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |