IAUCN04S7L028ATMA1 vs IAUCN04S7N015GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L028ATMA1 disebabkan oleh Infineon dan IAUCN04S7N015GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUCN04S7L028ATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 100 A | — |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | — |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | — |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | — |
| Gate Charge (Qg) | 24 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 1.578 nF | — |
| Output Capacitance (Coss) | 788 pF | — |
| Reverse Transfer Capacitance (Crss) | 36 pF | — |
| Pembuangan Kuasa (Ptot) | 58 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55C to +175C |
| Kemasan | PG-TDSON-8-33 (TDSON-8 EP) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount (IMS-compatible source-down) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |