IAUCN04S7L028ATMA1 vs IAUCN04S7N015GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L028ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N015GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 ✓ Nakahanda
Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7L028ATMA1 IAUCN04S7N015GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) 100 A —
On-State Resistance (RDS(on)) max 2.80 mOhm at VGS=10 V —
On-State Resistance (RDS(on)) 2.82 mOhm at VGS=10 V (JLCPCB reported) —
Gate-Source Threshold (VGS(th)) 1.8 V (typ) —
Gate Charge (Qg) 24 nC at VGS=10 V —
Input Capacitance (Ciss) 1.578 nF —
Output Capacitance (Coss) 788 pF —
Reverse Transfer Capacitance (Crss) 36 pF —
Pwersang Pinahihigpit (Ptot) 58 W —
Temperature ng Junction na Operasyon -55 C to +175 C -55C to +175C
Packhaging PG-TDSON-8-33 (TDSON-8 EP) PG-THSOG-4-1 (SSO4G 5x6) surface mount
Uri ng Pagpapasok Surface Mount Surface Mount (IMS-compatible source-down)
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 7
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Level ng MSL — 1 (per JEDEC J-STD-020)

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