IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7L024ATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7L024ATMA1 IQEH50NE2LM7ZCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 7 N-channel trench MOSFET OptiMOS 7 (Trench-Gate)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 177 A (Tj) —
Continuous Drain Current (Silicon-limited) 150 A —
On-Resistance RDS(on) max 2.4 mΩ at VGS=10 V —
Power Dissipation (PD) 148 W (Tc) —
Kemasan PG-TDSON-8-34 (SSO8 5x6 mm²) PG-TTFN-9-3
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (Tj) -55 degrees C to +175 degrees C
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Avalanche Energy Rated Yes (single-pulse) —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Aras MSL MSL1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Qualification — Industrial grade per Infineon datasheet

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga