IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L024ATMA1 sa pamamagitan ng Infineon at IQEH50NE2LM7ZCGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L024ATMA1 ✓ NakahandaInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7L024ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| Packhaging | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TTFN-9-3 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (Tj) | -55 degrees C to +175 degrees C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |