IAUCN08S7N024ATMA1 vs IAUZ30N08S5N186ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN08S7N024ATMA1 disebabkan oleh Infineon dan IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN08S7N024ATMA1 IAUZ30N08S5N186ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical/min/max]
Technology OptiMOS 7 trench OptiMOS 5 N-Channel Power MOSFET (trench)
Kemasan PG-TDSON-8-34 (8-pin, exposed pad) PG-TSDSON-8-32 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (typical automotive) -55 °C to +175 °C (automotive)
Pembuangan Kuasa (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Continuous Drain Current (ID, Tj) — 30 A
Power Dissipation (PD, Tc) — 41 W
On-State Resistance (RDS(on)) — 18.6 mΩ (typical, VGS = 10 V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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