IAUCN08S7N024ATMA1 vs IAUZ30N08S5N186ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7N024ATMA1 sa pamamagitan ng Infineon at IAUZ30N08S5N186ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 ✓ NakahandaInfineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7N024ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | Automotive OptiMOS 7 (80 V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Technology | OptiMOS 7 trench | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Packhaging | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TSDSON-8-32 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (typical automotive) | -55 °C to +175 °C (automotive) |
| Pwersang Pinahihigpit (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS Compliance | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |