IAUCN10S7N021ATMA1 vs IAUT300N08S5N012ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S7N021ATMA1 disebabkan oleh Infineon dan IAUT300N08S5N012ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUCN10S7N021ATMA1 IAUT300N08S5N012ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS™ 7 (trench MOSFET) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 175 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current IDM] 1200 A (per datasheet, typical)
RDS(on) max @ VGS=10 V 2.1 mΩ —
Gate-Source Threshold (VGS(th)) typ 3.2 V —
Total Gate Charge (Qg) @ VGS=10 V 105 nC —
Input Capacitance (Ciss) 2.98 nF —
Output Capacitance (Coss) 32 pF —
Reverse Transfer Capacitance (Crss) 7.153 nF —
Power Dissipation (Pd) @ Tc 217 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad PG-HSOF-8-1 (8-pin HSOF with drain tab)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS™-5 80 V
Jenis Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant
Aras MSL — [DATA_NEEDED: MSL level]

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