IAUZ20N08S5L300ATMA1 vs IAUC64N08S5L075ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ20N08S5L300ATMA1 disebabkan oleh Infineon dan IAUC64N08S5L075ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

IAUZ20N08S5L300ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ20N08S5L300ATMA1 IAUC64N08S5L075ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-5 —
Polarity N-Channel —
Drain-Source Voltage (Vds) 80 V —
Continuous Drain Current (Id) 20 A (Tc) —
Power Dissipation (Pd) 30 W (Tc) —
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V —
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating) —
Input Capacitance (Ciss) 599 pF @ 40 V —
Total Gate Charge (Qg) 10.5 nC @ 10 V [DATA_NEEDED: total gate charge]
Suhu Hubungan Operasi -55°C to +175°C -55 °C to +175 °C
Kemasan PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (automotive) —
Technology Trench MOSFET (OptiMOS-5) OptiMOS™ 5
Status RoHS Compliant —
Part Number — IAUC64N08S5L075ATMA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC=25°C — 64 A (TJ-limited)
On-Resistance (RDS(on)) max at VGS=10V — 7.5 mΩ
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage absolute maximum]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC=25°C — 75 W
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant
Aras MSL — MSL1 (per JEDEC J-STD-020)
Bilangan Pin — 8

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