IAUZ40N06S5L050ATMA1 vs BSC059N04LSGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5L050ATMA1 disebabkan oleh Infineon dan BSC059N04LSGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ40N06S5L050ATMA1 BSC059N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-TSDSON-8-33 (TSDSON-8) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) OptiMOS 3 (N-channel trench MOSFET)
Automotive Qualification AEC-Q100 qualified —
Status RoHS Compliant Compliant
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 73 A
Continuous Drain Current (ID, Ta=25C) — 16 A
On-State Resistance RDS(on) max @ VGS=10V — 5.9 mOhm
Power Dissipation (Tc=25C) — 50 W
Power Dissipation (Ta=25C) — 2.5 W
Gate-Source Threshold Voltage VGS(th) — 1.2 V to 2.0 V (typ)
Total Gate Charge Qg — [DATA_NEEDED: Qg total, typical nC]
Gambaran Suhu Operasi — -55 C to +150 C
Aras MSL — 1 (per JEDEC J-STD-020)
REACH Status — Compliant
Channel Type — N-Channel

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