IAUZ40N10S5N130ATMA1 vs IAUCN10S7L290TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N10S5N130ATMA1 disebabkan oleh Infineon dan IAUCN10S7L290TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZ40N10S5N130ATMA1 IAUCN10S7L290TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IAUZ40N10S5N130ATMA1 —
Technology OptiMOS 5 (super-junction trench) —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 40 A —
Pulsed Drain Current (IDM) 160 A [DATA_NEEDED: IDM pulse rating]
RDS(on) max at VGS=10V 13 mΩ —
RDS(on) typical 10 mΩ —
Maximum Power Dissipation (Tc) 68 W —
Kemasan PG-TSDSON-8-33 (S3O8), 3.3 × 3.3 mm PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ) —
Automotive Qualification AEC-Q101 qualified AEC-Q100 qualified
Lead-Free / RoHS ROHS3 Compliant —
Product Family — OptiMOS™ 7
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 45 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Aras MSL — 1 (per JEDEC J-STD-020)
RoHS Compliance — Compliant
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

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