IAUZN04S7L025ATMA1 vs IAUCN04S7N019GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZN04S7L025ATMA1 disebabkan oleh Infineon dan IAUCN04S7N019GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUZN04S7L025ATMA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-7 OptiMOS 7
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum] —
Continuous Drain Current (ID) at TC=25C 117 A —
Continuous Drain Current (ID) at TA 60 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] —
RDS(on) Max at VGS=10V 2.56 mΩ —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 65 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-TSDSON-8-44 (S3O8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q100 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Typical Applications Synchronous rectification, hot-swap, OR-ing, motor drive —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Status RoHS — Compliant
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)
Gambaran Suhu Operasi — [DATA_NEEDED: junction temperature range from datasheet]

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