IGLR70R200D2SXUMA1 vs IGK120B041SXTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLR70R200D2SXUMA1 disebabkan oleh Infineon dan IGK120B041SXTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGLR70R200D2SXUMA1 | IGK120B041SXTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN Bidirectional Switch (BDS) |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | Gallium Nitride (GaN) on Silicon |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | 30 A |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | 4.4 nC |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40 °C to +150 °C | [DATA_NEEDED: junction temperature range] |
| Kemasan | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | SG-UFWLB-16-2 (WLCSP 1.2 x 1.7 mm) |
| RoHS | Compliant | — |
| Generation | — | G3 (medium-voltage) |
| Jenis Transistor | — | N-Channel, Monolithic Bidirectional |
| Drain-Source Voltage (VDS, max) | — | 40 V (symmetric, both polarities) |
| Power Dissipation (Tc) | — | 15 W |
| Power Dissipation (Ta) | — | 1.2 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: typical RDS(on) in mOhm] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) in V] |
| Operating Mode | — | Normally-off |
| Jenis Pemasangan | — | Surface Mount |
| Status RoHS | — | Compliant (Pb-free) |