IGLR70R200D2SXUMA1 vs IGLT65R035D2ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IGLR70R200D2SXUMA1 disebabkan oleh Infineon dan IGLT65R035D2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IGLR70R200D2SXUMA1 | IGLT65R035D2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | CoolGaN™ G5 TOLT |
| Channel Type | N-Channel | — |
| Technology | GaN HEMT (E-mode, enhancement-mode) | — |
| Drain-Source Voltage (VDS) | 700 V | — |
| Continuous Drain Current (ID, Tc) | 9.3 A | — |
| Power Dissipation (PD, Tc) | 34 W | — |
| On-Resistance (RDS(on), max) | 200 mΩ | — |
| Total Gate Charge (Qg) | 1.26 nC | — |
| Output Capacitance (Coss) | 91 pF | — |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40 °C to +150 °C | [DATA_NEEDED: Tj min/max] |
| Kemasan | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-HDSOP-16-8 (top-side cooled) |
| RoHS | Compliant | — |
| Jenis Transistor | — | N-Channel enhancement-mode GaN HEMT |
| Drain-Source Voltage (Vdss) | — | 650 V |
| Continuous Drain Current (Id) at Tc | — | 47 A |
| Maximum Power Dissipation (Pd) at Tc | — | 154 W |
| On-Resistance (Rds(on)) | — | [DATA_NEEDED: typical Rds(on) in mohm] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Input Capacitance (Ciss) at Vds=400V | — | 540 pF |
| Jenis Pemasangan | — | Surface Mount |
| Cooling Configuration | — | Top-side cooled (TOLT) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Production Wafer Size | — | 200 mm (8 inch) |