IMLT40R011M2HXTMA1 vs ISZ056N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IMLT40R011M2HXTMA1 disebabkan oleh Infineon dan ISZ056N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IMLT40R011M2HXTMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | — |
| Jenis Transistor | N-Channel SiC MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 400 V | 30 V |
| Continuous Drain Current (ID, Tc) | 144 A | — |
| Power Dissipation (PD, Tc) | 429 W | — |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | 2.35 V (typ) |
| Recommended Gate Drive Voltage | 0 V to 18 V | — |
| Technology | Silicon Carbide (SiC) Gen-2 | — |
| Body Diode | Commutation-robust fast body diode, low Qrr | — |
| Avalanche Rating | 100% avalanche tested | — |
| Kemasan | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | — |
| Operating Mode | Enhancement mode | — |
| Target Topologies | 2- and 3-level hard- and soft-switching | — |
| Target Applications | AI server PSU, SMPS, motor drives | — |
| Status RoHS | Compliant | Compliant |
| Series | — | StrongIRFET 2 |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| Gambaran Suhu Operasi | — | -55 C to +175 C |