IMLT40R011M2HXTMA1 vs ISZ056N03LF2SATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IMLT40R011M2HXTMA1 tarafından Infineon ve ISZ056N03LF2SATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IMLT40R011M2HXTMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC MOSFET 400V G2 | — |
| Transistor Türü | N-Channel SiC MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 400 V | 30 V |
| Continuous Drain Current (ID, Tc) | 144 A | — |
| Power Dissipation (PD, Tc) | 429 W | — |
| On-State Resistance (RDS(on)) | 11 mΩ (typ) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (benchmark) | 2.35 V (typ) |
| Recommended Gate Drive Voltage | 0 V to 18 V | — |
| Technology | Silicon Carbide (SiC) Gen-2 | — |
| Body Diode | Commutation-robust fast body diode, low Qrr | — |
| Avalanche Rating | 100% avalanche tested | — |
| Paket | PG-HDSOP-16-8 (surface mount, top-side cooled) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Interconnection Technology | XT (best-in-class thermal performance) | — |
| Operating Mode | Enhancement mode | — |
| Target Topologies | 2- and 3-level hard- and soft-switching | — |
| Target Applications | AI server PSU, SMPS, motor drives | — |
| RoHS Durumu | Compliant | Compliant |
| Series | — | StrongIRFET 2 |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| İşletim Sıcaklığı Aralığı | — | -55 C to +175 C |