IPB024N10N5ATMA1 vs IPD068N10N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB024N10N5ATMA1 disebabkan oleh Infineon dan IPD068N10N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB024N10N5ATMA1 IPD068N10N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel MOSFET (trench, shielded gate) OptiMOS 3 (N-Channel, Enhancement Mode)
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, TC=25C) 180 A —
Power Dissipation (PD, TC=25C) 250 W —
On-Resistance RDS(on) max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg total gate charge] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge] —
Input Capacitance Ciss [DATA_NEEDED: Ciss value] —
Output Capacitance Coss [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kemasan PG-TO263-7 (D2PAK-7) PG-TO252-3 (DPAK, 2 leads + tab)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited floor life at <30C/85% RH) 1
Packaging Tape & Reel (13-inch reel) —
Boson Bebas Yes (per Infineon product family policy) —
Manufacturer — Infineon Technologies
Part Number — IPD068N10N3GATMA1
Continuous Drain Current (ID) at Tc — 90 A
On-Resistance RDS(on) max — 6.8 mOhm
Power Dissipation (PD) at Tc — 150 W
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V (typical)
Suhu Hubungan Operasi — -55 C to +175 C
Channel Type — N-Channel
Configuration — Single
Packing — Tape & Reel (T/R)
Qualification — Industrial (non-automotive)

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