IPB024N10N5ATMA1 vs IRF7469TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB024N10N5ATMA1 disebabkan oleh Infineon dan IRF7469TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB024N10N5ATMA1 IRF7469TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel MOSFET (trench, shielded gate) IR MOSFET™ (HEXFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, TC=25C) 180 A —
Power Dissipation (PD, TC=25C) 250 W —
On-Resistance RDS(on) max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg total gate charge] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge] 15 nC
Input Capacitance Ciss [DATA_NEEDED: Ciss value] —
Output Capacitance Coss [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Gambaran Suhu Operasi -55C to +175C (junction) -55°C to +150°C (Tj)
Kemasan PG-TO263-7 (D2PAK-7) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited floor life at <30C/85% RH) 1 (unlimited)
Packaging Tape & Reel (13-inch reel) —
Boson Bebas Yes (per Infineon product family policy) Yes
FET Type — N-Channel
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) at TA=25°C — 9 A
Rds(on) Max at Vgs=10V — 17 mΩ
Gate-Source Voltage (Vgs) Max — ±20 V
Power Dissipation (Pd) at TA=25°C — 2.5 W
Lead-Free — Yes
Channel Mode — Enhancement
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]

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