IPB038N12N3GATMA1 vs BSC032N04LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB038N12N3GATMA1 disebabkan oleh Infineon dan BSC032N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPB038N12N3GATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Kemasan / Case | PG-TO263-3 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench |
| Gate Drive | Logic-level compatible | — |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Part Series | — | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 98 A |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Kemasan | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Suhu Hubungan Operasi | — | -55°C to +175°C |
| Lead-Free | — | Yes |