IPB038N12N3GATMA1 vs BSC032N04LSATMA1 比較
詳細並排比較 IPB038N12N3GATMA1 由 Infineon 與 BSC032N04LSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPB038N12N3GATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| 封裝 / 外殼 | PG-TO263-3 (D2PAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench |
| Gate Drive | Logic-level compatible | — |
| 工作溫度範圍 | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Part Series | — | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 98 A |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| 封裝 | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| 工作接面溫度 | — | -55°C to +175°C |
| Lead-Free | — | Yes |