IPB038N12N3GATMA1 vs BSC032N04LSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB038N12N3GATMA1 sa pamamagitan ng Infineon at BSC032N04LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB038N12N3GATMA1 - 120V 120A 3.8mOhm N-Ch OptiMOS | Infineon
IPB038N12N3GATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPB038N12N3GATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | — |
| Continuous Drain Current (Id) @ Tc | 120 A | — |
| Power Dissipation (Pd) @ Tc | 300 W | — |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | — |
| Packhaging / Kaso | PG-TO263-3 (D2PAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench |
| Gate Drive | Logic-level compatible | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Standard Package Quantity | 1000 (Tape & Reel) | — |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Part Series | — | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta=25°C | — | 21 A |
| Continuous Drain Current (ID) at Tc=25°C | — | 98 A |
| RDS(on) max at VGS=10V | — | 3.2 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 52 W |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Packhaging | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |
| Lead-Free | — | Yes |