IPB051N15NM6ATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB051N15NM6ATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPB051N15NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current (ID) at TA=25C | 18 A | — |
| Continuous Drain Current (ID) at TC=25C | 139 A | — |
| RDS(on) Typical at VGS=10 V | 5.1 mOhm | — |
| Gate Charge (Qg) Typical | 51 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 234 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan / Case | PG-TO263-3-2 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Drain, Source, Gate) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Technology | — | OptiMOS 6 |
| Kemasan | — | PG-TDSON-8 FL |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |