IPB100N04S4H2ATMA1 vs IAUT165N08S5N029ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB100N04S4H2ATMA1 disebabkan oleh Infineon dan IAUT165N08S5N029ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ AktifInfineon
IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon
IAUT165N08S5N029ATMA2 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB100N04S4H2ATMA1 | IAUT165N08S5N029ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-T2 (trench gate) | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) at VGS=10V | 2.4 mΩ typical | — |
| Maximum Power Dissition (PD) at TC=25C | 115 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Kemasan | PG-TO263-3-2 (D2PAK-2) Surface Mount | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (up to 260C peak reflow) | — |
| Avalanche Energy (EAS) | 100% avalanche tested | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 Qualified |
| RoHS Compliance | Compliant (Green Product) | Green Product (RoHS compliant) |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IAUT165N08S5N029ATMA2 |
| Product Family | — | OptiMOS™ 5 |
| Jenis Transistor | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 165 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | 660 A |
| On-Resistance (R<sub>DS(on)</sub>) | — | 2.9 mΩ (typical) |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 167 W |
| Avalanche Energy (E<sub>AS</sub>) | — | 225 mJ |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (T<sub>j</sub>) |
| Kemasan / Case | — | PG-HSOF-8-1 (8+Tab, Surface Mount) |
| MSL Rating | — | MSL1 (up to 260 °C peak reflow) |
| Avalanche Tested | — | 100% Avalanche Tested |