IPB100N04S4H2ATMA1 vs IAUT165N08S5N029ATMA2 比較

詳細並排比較 IPB100N04S4H2ATMA1 由 Infineon 與 IAUT165N08S5N029ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUT165N08S5N029ATMA2 IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon

IAUT165N08S5N029ATMA2 - 80V 165A 2.9mΩ N-Ch OptiMOS 5 | Infineon

IAUT165N08S5N029ATMA2 ✓ 啟用中

規格比較

參數 IPB100N04S4H2ATMA1 IAUT165N08S5N029ATMA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS-T2 (trench gate) —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
RDS(on) at VGS=10V 2.4 mΩ typical —
Maximum Power Dissition (PD) at TC=25C 115 W —
工作接面溫度 -55C to +175C —
Storage Temperature [DATA_NEEDED: storage temp range] —
封裝 PG-TO263-3-2 (D2PAK-2) Surface Mount —
安裝類型 Surface Mount Surface Mount
MSL 等級 MSL1 (up to 260C peak reflow) —
Avalanche Energy (EAS) 100% avalanche tested —
Automotive Qualification AEC-Q101 qualified AEC-Q101 Qualified
RoHS Compliance Compliant (Green Product) Green Product (RoHS compliant)
Manufacturer — Infineon Technologies
Part Number — IAUT165N08S5N029ATMA2
Product Family — OptiMOS™ 5
電晶體類型 — N-Channel Enhancement Mode MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, Tc) — 165 A
Pulsed Drain Current (I<sub>DM</sub>) — 660 A
On-Resistance (R<sub>DS(on)</sub>) — 2.9 mΩ (typical)
Power Dissipation (P<sub>D</sub>, Tc) — 167 W
Avalanche Energy (E<sub>AS</sub>) — 225 mJ
工作溫度範圍 — -55 °C to +175 °C (T<sub>j</sub>)
封裝 / 外殼 — PG-HSOF-8-1 (8+Tab, Surface Mount)
MSL Rating — MSL1 (up to 260 °C peak reflow)
Avalanche Tested — 100% Avalanche Tested

資料表與資源

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