IPB107N20N3GATMA1 vs BSC123N08NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB107N20N3GATMA1 disebabkan oleh Infineon dan BSC123N08NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB107N20N3GATMA1 BSC123N08NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at Tc 88 A —
Maximum Power Dissipation (Pd) at Tc 300 W —
On-Resistance RDS(on) at VGS=10V 9.6 milliohm (typical, per third-party listing) —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] [DATA_NEEDED: VGS(th) value]
Gambaran Suhu Operasi [DATA_NEEDED: Tj max and operating range] —
Kemasan PG-TO263-3 (D2PAK) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Drain, Source, Gate) + Tab —
Status RoHS Compliant Compliant with exemption
Technology OptiMOS 3 trench MOSFET —
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]
Power Dissipation (Tc) — 66 W
Power Dissipation (Ta) — 2.5 W
Suhu Hubungan Operasi — -55C to +150C
Aras MSL — 1 (per JEDEC J-STD-020)
Automotive Qualified — Yes (AEC-Q101)

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