IPB45N06S4L08ATMA3 vs IPB110P06LMATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB45N06S4L08ATMA3 disebabkan oleh Infineon dan IPB110P06LMATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB45N06S4L08ATMA3 IPB110P06LMATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS-T2 —
Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V -60 V
Continuous Drain Current (ID, TC=25C) 45 A —
On-Resistance RDS(on) max @ VGS=10V 7.9 mOhm —
Power Dissipation (TC=25C) 71 W —
Suhu Hubungan Operasi -55C to +175C —
Gate Threshold Voltage VGS(th) 1.2 V to 2.4 V (typ 1.7 V) —
Kemasan PG-TO263-3-2 (D2PAK) —
Jenis Pemasangan Surface Mount Surface Mount
MSL Moisture Sensitivity MSL1 (260C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Tested 100% avalanche tested —
RoHS Compliance Yes (Green Product) —
Lead-Free Yes Yes
Boson Bebas Yes —
Total Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Reverse Recovery Charge Qrr [DATA_NEEDED: reverse recovery charge] —
Thermal Resistance RthJC max [DATA_NEEDED: thermal resistance junction-to-case] —
FET Type — P-Channel
Technology — OptiMOS (trench MOSFET)
Continuous Drain Current (ID) at TC=25C — -100 A
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
Gambaran Suhu Operasi — -55 C to +175 C (TJ)
Kemasan / Case — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
Status RoHS — Compliant

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