IPB60R040CFD7ATMA1 vs IPB037N06N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R040CFD7ATMA1 disebabkan oleh Infineon dan IPB037N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktifInfineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IPB60R040CFD7ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Pembuangan Kuasa (TC=25°C) | 227 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 C to +175 C (junction) |
| Kemasan | PG-TO263-3-2 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Aras MSL | 1 | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| Kemasan / Case | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| Drain Tab Connection | — | Tab electrically tied to drain |