IPB60R040CFD7ATMA1 vs IPB037N06N3GATMA1 比較
詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPB037N06N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 ✓ 啟用中規格比較
| 參數 | IPB60R040CFD7ATMA1 | IPB037N06N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | In Stock | — |
| 單價 (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 3 (N-channel, enhancement mode) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| 功率耗散 (TC=25°C) | 227 W | — |
| 工作溫度範圍 | -55°C to +150°C | -55 C to +175 C (junction) |
| 封裝 | PG-TO263-3-2 (D2PAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| MSL 等級 | 1 | 1 (unlimited) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Part Number | — | IPB037N06N3GATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| On-Resistance RDS(on) Max | — | 3.7 mOhm at VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | 2.0 V to 3.5 V |
| Total Power Dissipation (Pd) at Tc | — | 188 W |
| 封裝 / 外殼 | — | PG-TO263-3 (D2PAK, surface mount) |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: gate charge value] |
| Drain Tab Connection | — | Tab electrically tied to drain |