IPB60R040CFD7ATMA1 vs IPL60R065C7AUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R040CFD7ATMA1 disebabkan oleh Infineon dan IPL60R065C7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPB60R040CFD7ATMA1 | IPL60R065C7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $5.19 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 50 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Pembuangan Kuasa (TC=25°C) | 227 W | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 °C to +150 °C (T_J) |
| Kemasan | PG-TO263-3-2 (D2PAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | — |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | Compliant with Exemption |
| Lead-Free | Yes | — |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | — |
| Series | — | CoolMOS C7 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Process Technology | — | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | — | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | — | 180 W |
| Gate-Source Voltage (V_GS, max) | — | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | — | 3.5 V |
| Kemasan / Case | — | PG-VSON-4-1 (Source-Down) |
| Automotive Qualified (AEC-Q101) | — | No |
| Total Gate Charge (Q_G, typ.) | — | [DATA_NEEDED: Q_G typ. value] |
| Output Capacitance Stored Energy (E_OSS) | — | [DATA_NEEDED: E_OSS typ. value] |