IPB60R040CFD7ATMA1 vs IPL60R065C7AUMA1 比較

詳細並排比較 IPB60R040CFD7ATMA1 由 Infineon 與 IPL60R065C7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPB60R040CFD7ATMA1 IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon

IPB60R040CFD7ATMA1 ✓ 啟用中
Infineon
IPL60R065C7AUMA1 IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon

IPL60R065C7AUMA1 - 600V CoolMOS C7 65mΩ N-Ch MOSFET | Infineon

IPL60R065C7AUMA1 ✓ 啟用中

規格比較

參數 IPB60R040CFD7ATMA1 IPL60R065C7AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
庫存狀態 In Stock —
單價 (USD) $5.19 —
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 —
Technology Superjunction (SJ) N-Channel MOSFET —
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 50 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 40 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Gate Charge Qg typ [DATA_NEEDED: Qg] —
功率耗散 (TC=25°C) 227 W —
工作溫度範圍 -55°C to +150°C -55 °C to +150 °C (T_J)
封裝 PG-TO263-3-2 (D2PAK) —
安裝類型 Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode —
MSL 等級 1 —
RoHS 狀態 Compliant Compliant with Exemption
Lead-Free Yes —
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) —
Series — CoolMOS C7
Part Status — Active
FET Type — N-Channel
Process Technology — CoolMOS C7 (Superjunction)
Maximum Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 29 A
On-Resistance (R_DS(on), typ., V_GS=10V) — 65 mΩ
Maximum Power Dissipation (P_D, T_C=25°C) — 180 W
Gate-Source Voltage (V_GS, max) — ±20 V
Gate-Source Threshold (V_GS(th), typ.) — 3.5 V
封裝 / 外殼 — PG-VSON-4-1 (Source-Down)
Automotive Qualified (AEC-Q101) — No
Total Gate Charge (Q_G, typ.) — [DATA_NEEDED: Q_G typ. value]
Output Capacitance Stored Energy (E_OSS) — [DATA_NEEDED: E_OSS typ. value]

資料表與資源

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