IPB60R165CPATMA1 vs IPD60R210PFD7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB60R165CPATMA1 disebabkan oleh Infineon dan IPD60R210PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB60R165CPATMA1 IPD60R210PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS CP (superjunction, N-Channel) Superjunction (CoolMOS) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 21 A —
Power Dissipation (PD, Tc=25°C) 192 W —
On-Resistance RDS(on), max (VGS=10V) 165 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th), typ) 3.5 V 3.5 V
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] —
Operating Temperature Range (TJ) -55°C to +150°C —
Kemasan PG-TO263-3-2 (D2PAK-2) —
Jenis Pemasangan Surface Mount Surface Mount (SMT)
Status RoHS Compliant (Pb-free lead plating) —
JEDEC Qualification Qualified per JEDEC for target applications —
dv/dt Ruggedness Extreme dv/dt rated —
Polarity / Channel N-Channel —
Manufacturer — Infineon Technologies
Product Family — CoolMOS PFD7
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Gambaran Suhu Operasi — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

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