IPB60R165CPATMA1 vs IPD60R210PFD7SAUMA1 比較
詳細並排比較 IPB60R165CPATMA1 由 Infineon 與 IPD60R210PFD7SAUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB60R165CPATMA1 - 600V 165mΩ CoolMOS CP N-Channel MOSFET | Infineon
IPB60R165CPATMA1 ✓ 啟用中Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ 啟用中規格比較
| 參數 | IPB60R165CPATMA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS CP (superjunction, N-Channel) | Superjunction (CoolMOS) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 21 A | — |
| Power Dissipation (PD, Tc=25°C) | 192 W | — |
| On-Resistance RDS(on), max (VGS=10V) | 165 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | 3.5 V |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Operating Temperature Range (TJ) | -55°C to +150°C | — |
| 封裝 | PG-TO263-3-2 (D2PAK-2) | — |
| 安裝類型 | Surface Mount | Surface Mount (SMT) |
| RoHS 狀態 | Compliant (Pb-free lead plating) | — |
| JEDEC Qualification | Qualified per JEDEC for target applications | — |
| dv/dt Ruggedness | Extreme dv/dt rated | — |
| Polarity / Channel | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS PFD7 |
| Continuous Drain Current (ID, Tc) | — | 16 A |
| On-Resistance (RDS(on), max) | — | 210 mOhm |
| Power Dissipation (Ptot, Tc=25C) | — | 64 W |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Package Type | — | TO-252 (DPAK) |
| Manufacturer Package Designator | — | PG-TO252-3-344 |
| Pin Configuration | — | 3-Pin (2+Tab) - Gate, Drain (tab), Source |
| 工作溫度範圍 | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (compliant) |
| Application Segment | — | Consumer-grade SMPS |