IPB70N10S3L12ATMA1 vs IPB70N10S3L12ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB70N10S3L12ATMA1 disebabkan oleh Infineon dan IPB70N10S3L12ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB70N10S3L12ATMA1 IPB70N10S3L12ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS (IPB70N10) —
Jenis Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 70 A —
Peak Drain Current (IDM) 180 A —
On-Resistance RDS(on) max at VGS=10V 11.8 mΩ —
Power Dissipation (PD) at TC=25°C 125 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan / Case PG-TO263-3-2 (D2PAK, 2 Leads + Tab) —
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 Qualified AEC-Q101
MSL (Moisture Sensitivity Level) MSL1 (up to 260 °C peak reflow) —
RoHS / Green RoHS Compliant, Green Product —
Avalanche Tested 100 % Avalanche Tested 100% tested
Boson Bebas Yes —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 70 A
R<sub>DS(on)</sub> (Max) @ V<sub>GS</sub>=10V — 11.8 mΩ
Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25°C — 125 W
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: V<sub>GS(th)</sub> typical/min/max]
Gambaran Suhu Operasi — -55°C to +175°C
Kemasan — PG-TO263-3-2 (D2PAK)
Peak Reflow Temperature — 260°C (JEDEC J-STD-020)
RoHS / Green Compliance — Compliant (Green product)
Technology — OptiMOS-T trench
Polarity — N-Channel Enhancement Mode

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