IPC50N04S5L5R5ATMA1 vs IAUA120N04S5N014AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon dan IAUA120N04S5N014AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPC50N04S5L5R5ATMA1 IAUA120N04S5N014AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Gambaran Suhu Operasi -55 °C to +175 °C -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet]
Kemasan PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-HSOF-5-2 (sTOLL)
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — IAUA120N04S5N014AUMA1
Series — OptiMOS™ 5
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (V<sub>DSS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C — 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V — 1.4 mΩ
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C — 136 W
Kiraan Pin — 5 + Tab (6 effective)
Gate Drive — Enhancement Mode
Automotive Qualification — AEC-Q101
Status RoHS — Compliant
Aras MSL — [DATA_NEEDED: MSL rating]
Avalanche Rated — Yes (100% avalanche tested)

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