IPD031N03LGATMA1 vs BSC0911NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD031N03LGATMA1 disebabkan oleh Infineon dan BSC0911NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD031N03LGATMA1 BSC0911NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide), OptiMOS 3 OptiMOS trench MOSFET
Drain-to-Source Voltage (Vdss) 30 V —
Continuous Drain Current (Id) @ 25 °C 90 A (Tc) —
Power Dissipation (Pd) 94 W (Tc) —
RDS(on) Max @ VGS=10V 3.1 mΩ —
RDS(on) Max @ VGS=4.5V [DATA_NEEDED: RDS(on) @ 4.5V] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical/max] —
Drive Voltage (Max RDS(on), Min RDS(on)) 4.5 V, 10 V —
Gate Charge (Qg) [DATA_NEEDED: Qg typical @ 10V Vgs] —
Output Charge (Qoss) Ultra low (per datasheet tagline) —
Suhu Operasi -55 °C to +175 °C (junction) -55C to +150C (junction)
Kemasan PG-TO252-3-11 (DPAK-2) PG-TISON-8 (8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Mounting Tab Drain (electrically connected) —
Avalanche Energy Rated Yes (per OptiMOS 3 datasheet family) —
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL rating]
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Configuration — Dual N-Channel (2 N-CH)
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) — 18 A
Pulsed Drain Current (IDM) — 30 A
Power Dissipation (PD) — 1 W
Channel Type — N-Channel Enhancement Mode
Gate Threshold (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]

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